Text: © Semiconductor Components Industries, LLC, 2004 35 April, 2004 - Rev. SafeĢN3055 MJ2955 2N3055/D 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagramĪbstract: DC variable power with 2n3055 2N3055G power transistor 2n3055 2n3055 amplifier 2N3055 transistor data transistor 2n3055 MJ2955 TRANSISTOR Mj2955 power transistor mj2955 safe operating area 20 There are two limitations on the power handling ability of a transistor : average junction temperature and second breakdown. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. 2 2N3055 MJ2955 20 IC, COLLECTOR CURRENT (AMP) 10 6 4 2 1 0.6 0.4 0.2 6 BONDING WIRE LIMIT THERMALLY, ) 60 500 µs 250 µs 2N3055, MJ2955 50 µs dc 1 ms There are two limitations on the power handlingĢN3055 MJ2955 r14525 2N3055/D 2N3055 power amplifier circuit 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPANĪbstract: 2N3055 NPN Transistor 2n3055 circuit diagram 2N3055 power amplifier circuit diagram 2n3055 application note MJ2955 2n3055 200 watts amplifier diagram ( 2N3055 ) (1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%. DC Current Gain - hFE =, Registration.2N3055 * PNP MJ2955 * *ON Semiconductor Preferred Device NPN 2N3055 equivalent transistor NUMBER Datasheets Context Search Catalog DatasheetĪbstract: 2n3055 2n3055 application 2N3055 MEXICO MJ2955 2N3055 typical applications 2N3055 MJ2955 2n3055 circuit mj2955 transistor 2N3055 JAPAN

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